Article
Nanoscience & Nanotechnology
Yang Mei, Minchao Xie, Tao Yang, Xin Hou, Wei Ou, Hao Long, Leiying Ying, Yuejun Liu, Shaoqiang Chen, Guoen Weng, Baoping Zhang
Summary: This study ingeniously proposes and fabricates suspended GaN-based micro-LEDs, which exhibit significantly enhanced light emission compared to conventional micro-LEDs. The enhanced output intensity benefits from partially relaxed strain and reduced quantum confined Stark effect, as well as improved light extraction efficiency.
Article
Materials Science, Multidisciplinary
Jun Tatebayashi, Kazuto Nishimura, Shuhei Ichikawa, Shinya Yamada, Yoshikata Nakajima, Kazuhisa Sato, Kohei Hamaya, Yasufumi Fujiwara
Summary: This study demonstrates a heterojunction p-GaN/n-ZnO LED structure using Eu-doped ZnO as an active component, aiming to realize low-cost and environmentally-friendly red LEDs with sharp linewidth and temperature stability. An Al2O3 electron blocking layer is inserted between p-GaN and ZnO:Eu/n-ZnO to facilitate carrier injection into the ZnO:Eu active layer. The device characteristics of the LED structures show red luminescence under current injection with reversed bias voltage, originating from Eu3+ ions in the ZnO host. Detailed optical characteristics of the ZnO:Eu layer enable the identification of luminescence centers contributing to Eu luminescence under indirect excitation and collisional excitation, paving the way for understanding the Eu luminescence mechanism in ZnO:Eu and realizing high-brightness LED structures based on rare-Earth doped ZnO.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2023)
Article
Chemistry, Physical
Xianwei Bai, Lingqiang Meng, Ni Zhou, Jinju Zheng, Xue-Feng Yu, Paul K. Chu, Jun-Jun Xiao, Bingsuo Zou, Jia Li
Summary: The study successfully prepared Mn-doped perovskite nanocrystalline films and analyzed their properties, revealing good crystalline structure and uniform size/spatial distribution, as well as bright dual-color emission and long excited state lifetime.
JOURNAL OF COLLOID AND INTERFACE SCIENCE
(2022)
Article
Materials Science, Ceramics
Maksym Buryi, Tatsiana Salamakha, Vladimir Babin, Juraj Paterek, Frantisek Hajek, Zdenek Remes, Lucie Landova, Ekaterina Trusova, Yauhen Tratsiak
Summary: Through experiments, it has been confirmed that glass ceramics containing MI2:Eu crystalline particles, with M = Ca, Sr, and Ba, have been formed in MO-B2O3 glass, with the source of Eu2+ ions originating from the MO-B2O3 glass hosts. The distribution of Eu2+ and its properties in the glass ceramics were studied, and the optimal conditions leading to enhanced emission of Eu2+ in CaI2 and SrI2 crystals inside the glasses were determined.
CERAMICS INTERNATIONAL
(2021)
Article
Physics, Applied
C. Berger, S. Neugebauer, F. Hoerich, A. Dadgar, A. Strittmatter
Summary: This article reports on the metalorganic vapor phase epitaxy of highly conductive germanium-doped GaN layers and their application in TJ-LEDs. The layers exhibit high transparency and good crystalline quality, making them attractive as current spreading layers in light-emitting devices. TJ-LEDs demonstrate high current tolerance and enhanced light output.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Physics, Applied
Taiga Fudetani, Kohei Ueno, Atsushi Kobayashi, Hiroshi Fujioka
Summary: Silicon-doped GaN grown using pulsed sputtering deposition showed promising characteristics when applied as tunneling junction contacts in nitride-based optoelectronic devices, with lower differential resistance and stable performance under high injection currents.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Wen Chen, Meixin Feng, Yongjun Tang, Jian Wang, Jianxun Liu, Qian Sun, Xumin Gao, Yongjin Wang, Hui Yang
Summary: GaN-on-Si resonant-cavity light-emitting diodes (RCLEDs) were successfully fabricated through wafer bonding and Si substrate removal. The double-sided dielectric distributed Bragg reflectors formed a high-quality optical resonant cavity, showing good spectral characteristics. High data transmission rates and low-cost emitters make them advantageous for future visible light communications.
Article
Optics
Han Kang, Jiaolong Peng, Ze Zhang, Wei Zhou
Summary: The emitting color of phosphors can be modulated by adjusting the excitation wavelength and ion concentration. The fluorescence color of Eu-Tb(btc) can be transitioned by adjusting the Eu3+/Tb3+ ratios. Co-doping inert rare earth ions can optimize white-light emitting.
JOURNAL OF LUMINESCENCE
(2022)
Article
Optics
Kun Wang, Peiqi Chen, Jingjing Chen, Ye Liu, Chaoxing Wu, Jie Sun, Xiongtu Zhou, Yongai Zhang, Tailiang Guo
Summary: In this study, GaN-based nanorod LEDs were utilized to fabricate AC-driven nano-EL devices, including single-dielectric AC-nLED and double-dielectric AC-nLED configurations, with different frequency responses in electrical and optical characteristics. The alternative device configuration is expected to be applied in nano-photonic systems and nano-pixel light-emitting displays.
OPTICS AND LASER TECHNOLOGY
(2021)
Article
Physics, Applied
Y. C. Chow, C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, J. S. Speck
Summary: Differential carrier lifetime measurements were conducted on c-plane InGaN/GaN LEDs of different QW indium compositions, showing that doped barriers can reduce the internal electric field and improve electron-hole wavefunction overlap. LEDs with higher indium composition demonstrate better performance despite the introduction of more non-radiative recombination centers.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Wai Yuen Fu, Hoi Wai Choi
Summary: A light-emitting bipolar transistor (LEBJT) has been developed by utilizing the existing LED structure to construct a PNP bipolar junction transistor, eliminating the need for customized structures or epitaxial regrowth. Two designs of GaN LEBJT were demonstrated, with one featuring a larger emitter area for electronic-optical signal conversion and another with a reduced emitter area for increased current gain.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Physics, Condensed Matter
Tao Zhu, Liwen Cheng, Xianghua Zeng
Summary: Adjusting the size of V-shaped pits can improve the reliability of InGaN LEDs, reduce aging attenuation, and avoid thermal breakdown effects under high current impact, while increasing ESD yield. This is achieved by providing an additional current channel and avoiding non-radiation recombination of carriers on dislocations through the barrier effect of V-pits.
SUPERLATTICES AND MICROSTRUCTURES
(2021)
Article
Chemistry, Multidisciplinary
Jianfei Li, Duo Chen, Kuilong Li, Qiang Wang, Mengyao Shi, Dejie Diao, Chen Cheng, Changfu Li, Jiancai Leng
Summary: The study suggests that a 20 nm-thick LT p-GaN layer can effectively prevent indium re-evaporation, enhance the quantum-confined Stark effect in the last quantum well of the active region, and reduce efficiency droop by about 7%.
Article
Materials Science, Ceramics
Nisar Hussain, Seemin Rubab, Vijay Kumar
Summary: A series of Dy3+-activated Ba2La8(SiO4)6O2 phosphors with varying concentrations were synthesized and their crystal structure, optical properties, and photoluminescence characteristics were investigated. The phosphors exhibited characteristic yellow emission upon exposure to ultraviolet light, and the asymmetric environment around the ligand was suggested by the Judd-Ofelt parameters. Due to the dominance of the electric-dipole transition, a yellowish white emission with specific coordinates and correlated color temperature was achieved. These phosphors may have potential applications in white light emitting LED technologies.
CERAMICS INTERNATIONAL
(2023)
Article
Materials Science, Multidisciplinary
Xiansheng Tang, Ziguang Ma, Lili Han, Zhen Deng, Yang Jiang, Wenxin Wang, Hong Chen, Chunhua Du, Haiqiang Jia
Summary: This study reports the fabrication of vertical GaN-based LEDs through a chemical etching process to remove Si substrate, ICP-RIE to remove the un-doped buffer, and Cu electroplating technology. The residual strain between the epitaxial structure and growth substrate is effectively released, and the vertical GaN-based LEDs exhibit better output power and heat dissipation capacity.
