Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics

Published 2011 View Full Article

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Title
Gate bias stress stability under light irradiation for indium zinc oxide thin-film transistors based on anodic aluminium oxide gate dielectrics
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 44, Issue 45, Pages 455102
Publisher
IOP Publishing
Online
2011-10-28
DOI
10.1088/0022-3727/44/45/455102

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