Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

Published 2010 View Full Article

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Title
Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 43, Issue 34, Pages 345303
Publisher
IOP Publishing
Online
2010-08-13
DOI
10.1088/0022-3727/43/34/345303

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