High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD

Title
High performance InGaN LEDs on Si (1 1 1) substrates grown by MOCVD
Authors
Keywords
-
Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 43, Issue 35, Pages 354008
Publisher
IOP Publishing
Online
2010-08-20
DOI
10.1088/0022-3727/43/35/354008

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Become a Peeref-certified reviewer

The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.

Get Started