Stable bipolar resistance switching behaviour induced by a soft breakdown process at the Al/La0.7Ca0.3MnO3interface

Origin of Negative Differential Resistance Observed on Bipolar Resistance Switching Device with Ti/Pr0.7Ca0.3MnO3/Pt Structure

(2008) Keiji Shono et al.   Applied Physics Express

Enhancement of Switching Capability on Bipolar Resistance Switching Device with Ta/Pr0.7Ca0.3MnO3/Pt Structure

(2008) Hiroyasu Kawano et al.   Applied Physics Express

Resistance dependence of photovoltaic effect in Au/SrTiO3:Nb(0.5 wt %) Schottky junctions

(2008) D. S. Shang et al.   APPLIED PHYSICS LETTERS

Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface

(2008) T. Harada et al.   APPLIED PHYSICS LETTERS

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

(2008) Wan Shen et al.   APPLIED PHYSICS LETTERS

Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures

(2008) Musarrat Hasan et al.   APPLIED PHYSICS LETTERS

Reverse-bias-induced bipolar resistance switching in Pt∕TiO2∕SrTi0.99Nb0.01O3∕Pt devices

(2008) S. X. Wu et al.   APPLIED PHYSICS LETTERS

Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices

(2008) Tae-Wook Kim et al.   APPLIED PHYSICS LETTERS