Indium tin oxide films prepared by atmospheric plasma annealing and their semiconductor-metal conductivity transition around room temperature

We report the synthesis of indium tin oxide (ITO) films using the atmospheric plasma annealing (APA) technique combined with the spin-coating method. The ITO film with a low resistivity of similar to 4.6 x 10(-4) Omega cm and a high visible light transmittance, above 85%, was achieved. Hall measurement indicates that compared with the optimized ITO films deposited by magnetron sputtering, the above-mentioned ITO film has a higher carrier concentration of similar to 1.21 x 10(21) cm(-3) and a lower mobility of similar to 11.4 cm(2) V-1 s(-1). More interestingly, these electrical characteristics result in the semiconductor-metal conductivity transition around room temperature for the ITO films prepared by APA.