Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 42, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/42/1/015108
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Funding
- National Natural Science Foundation of China [60506001, 60476021, 60576003, 60776047, 60836003]
- National Basic Research Program [2007CB936700]
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Visible-blind p-i-n avalanche photodiodes (APDs) were fabricated with high-quality GaN epilayers deposited on c-plane sapphire substrates by metal-organic chemical vapour deposition. Due to low dislocation density and a sophisticated device fabrication process, the dark current was as small as similar to 0.05 nA under reverse bias up to 20V for devices with a large diameter of 200 mu m, which was among the largest device area for GaN-based p-i-n APDs yet reported. When the reverse bias exceeded 38V the dark current increased sharply, exhibiting a bulk avalanche field-dominated stable breakdown without microplasma formation or sidewall breakdown. With ultraviolet illumination (360 nm) an avalanche multiplication gain of 57 was achieved.
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