Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure
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Title
Optically Addressable Silicon Vacancy-Related Spin Centers in Rhombic Silicon Carbide with High Breakdown Characteristics and ENDOR Evidence of Their Structure
Authors
Keywords
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Journal
PHYSICAL REVIEW LETTERS
Volume 115, Issue 24, Pages -
Publisher
American Physical Society (APS)
Online
2015-12-12
DOI
10.1103/physrevlett.115.247602
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