4.8 Article

Universal Increase in the Superconducting Critical Temperature of Two-Dimensional Semiconductors at Low Doping by the Electron-Electron Interaction

Journal

PHYSICAL REVIEW LETTERS
Volume 114, Issue 7, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.114.077001

Keywords

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Funding

  1. Graphene Flagship
  2. Agence Nationale de la Recherche [ANR-11-BS04-0019, ANR-13-IS10-0003-01]
  3. Agence Nationale de la Recherche (ANR) [ANR-11-BS04-0019] Funding Source: Agence Nationale de la Recherche (ANR)

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In two-dimensional multivalley semiconductors, at low doping, even a moderate electron-electron interaction enhances the response to any perturbation inducing a valley polarization. If the valley polarization is due to the electron-phonon coupling, the electron-electron interaction results in an enhancement of the superconducting critical temperature. By performing first-principles calculations beyond density functional theory, we prove that this effect accounts for the unconventional doping dependence of the superconducting transition temperature (T-c) and of the magnetic susceptibility measured in LixZrNCI. Finally, we discuss what are the conditions for a maximal T-c enhancement in weakly doped two-dimensional semiconductors.

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