Journal
JOURNAL OF PHYSICAL CHEMISTRY C
Volume 118, Issue 17, Pages 8899-8906Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jp410716q
Keywords
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Funding
- Program for New Century Excellent Talents in University [NCET-10-0169]
- National Natural Science Foundation of China [11032010, 11304263, 11304264]
- Hunan Provincial Innovation Foundation for Postgraduate [CX2013B263]
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The effect of H/F chemical decoration on the spin switch of a single 3d transition-metal (TM = Mn, Fe, Co) doped boron nitride (BN) sheet is systematically studied using density functional theory plus Hubbard U (DFT+U). It is found that the ground spin state of a TM embedded in a BN sheet is sensitive to the value of the on-site Coulomb energy. Interestingly, we find that the spin of the Fe BN system is switched from spin ON (S = 5/2) to spin OFF (S = 0) for H decoration and from spin high (S = 2) to spin low (S = 1/2) for H-decorated Mn BN and F-decorated Co BN systems. Such spin state switching can open a new route to realize the applications of TM-doped BN for spintronics and quantum information.
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