Interfacial Charge States in Graphene on SiC Studied by Noncontact Scanning Nonlinear Dielectric Potentiometry

We investigate pristine and hydrogen-intercalated graphene synthesized on a 4H-SiC(0001) substrate by using noncontact scanning nonlinear dielectric potentiometry (NC-SNDP). Permanent dipole moments are detected at the pristine graphene-SiC interface. These originate from the covalent bonds of carbon atoms of the so-called buffer layer to the substrate. Hydrogen intercalation at the interface eliminates these covalent bonds and the original quasi-(6 x 6) corrugation, which indicates the conversion of the buffer layer into a second graphene layer by the termination of Si bonds at the interface. NC-SNDP images suggest that a certain portion of the Si dangling bonds remains even after hydrogen intercalation. These bonds are thought to act as charged impurities reducing the carrier mobility in hydrogen-intercalated graphene on SiC.