4.6 Article

Electronic Phase Transitions of δ-AgxV2O5 Nanowires: Interplay between Geometric and Electronic Structures

Journal

JOURNAL OF PHYSICAL CHEMISTRY C
Volume 118, Issue 36, Pages 21235-21243

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jp506238s

Keywords

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Funding

  1. Semiconductor Research Corporation [ID 2453.001]
  2. National Science Foundation [DMR 0847169]
  3. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DESC0002623]
  4. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357, DE-AC02-98CH10886]
  5. Division Of Materials Research
  6. Direct For Mathematical & Physical Scien [0847169, 0847324] Funding Source: National Science Foundation

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Vanadium oxide bronzes, with the general formula MxV2O5, provide a wealth of compositions and frameworks where strong electron correlation can be systematically (albeit thus far only empirically) tuned. In this work, we report the synthesis of single-crystalline delta-Ag0.88V2O5 nanowires and unravel pronounced electronic phase transitions induced in response to temperature and applied electric field. Specifically, a pronounced semiconductor-semiconductor transition is evidenced for these materials at ca. 150 K upon heating, and a distinctive insulatorconductor transition is observed upon application of an in-plane voltage. An orbital-specific picture of the mechanistic basis of the phase transitions is proposed using a combination of density functional theory (DFT) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. Structural refinements above and below the transition temperature, angle-resolved O K-edge NEXAFS spectra, and DFT calculations suggest that the electronic phase transitions in these 2D frameworks are mediated by a change in the overlap of dxy orbitals.

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