Effect of Doping Density on the Charge Rearrangement and Interface Dipole at the Molecule–Silicon Interface

Published 2013 View Full Article

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Title
Effect of Doping Density on the Charge Rearrangement and Interface Dipole at the Molecule–Silicon Interface
Authors
Keywords
-
Journal
Journal of Physical Chemistry C
Volume 117, Issue 43, Pages 22422-22427
Publisher
American Chemical Society (ACS)
Online
2013-06-18
DOI
10.1021/jp403177e

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