4.6 Article

Diode Junctions in Single ZnO Nanowires as Half-Wave Rectifiers

Journal

JOURNAL OF PHYSICAL CHEMISTRY C
Volume 113, Issue 42, Pages 18047-18052

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/jp906161w

Keywords

-

Funding

  1. CSIR Junior Research Fellowship [9/80(491)/2005-EMR-I, 509342]
  2. Department of Science & Technology, Government of India [SR/S2/RFCMP-02/2005]

Ask authors/readers for more resources

We introduce dopants in a section of ZnO vertical nanowires. This forms a junction in the nanowires that exhibit diode nature in current-voltage characteristics. Under sinusoidal ac voltage, the nanowires act as half-wave rectifiers. Operation of the rectifiers at high frequencies is restricted by a phase lag between Current and applied ac voltage. We vary the length of the vertical nanowire junctions and study its effect on rectification characteristics. We find that the phase lag of current is less in shorter nanowire diodes than that in the longer ones. The shorter diodes hence operate until higher frequencies as half-wave rectifiers.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available