Spin and photophysics of carbon-antisite vacancy defect in4Hsilicon carbide: A potential quantum bit

Isolated electron spins in silicon carbide with millisecond coherence times

(2014) David J. Christle et al.   NATURE MATERIALS

Coherent control of single spins in silicon carbide at room temperature

(2014) Matthias Widmann et al.   NATURE MATERIALS

Negative-Ucarbon vacancy in 4H-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site

(2014) X. T. Trinh et al.   PHYSICAL REVIEW B

Electrically and Mechanically Tunable Electron Spins in Silicon Carbide Color Centers

(2014) Abram L. Falk et al.   PHYSICAL REVIEW LETTERS

A silicon carbide room-temperature single-photon source

(2013) S. Castelletto et al.   NATURE MATERIALS

Room-temperature quantum microwave emitters based on spin defects in silicon carbide

(2013) H. Kraus et al.   Nature Physics

Hyperfine coupling of point defects in semiconductors by hybrid density functional calculations: The role of core spin polarization

(2013) Krisztián Szász et al.   PHYSICAL REVIEW B

Quantum Spintronics: Engineering and Manipulating Atom-Like Spins in Semiconductors

(2013) D. D. Awschalom et al.   SCIENCE

Excitation spectrum of point defects in semiconductors studied by time-dependent density functional theory

(2012) Adam Gali   JOURNAL OF MATERIALS RESEARCH

Room Temperature Coherent Spin Alignment of Silicon Vacancies in4H- and6H-SiC

(2012) Victor A. Soltamov et al.   PHYSICAL REVIEW LETTERS

High-fidelity projective read-out of a solid-state spin quantum register

(2011) Lucio Robledo et al.   NATURE

Room temperature coherent control of defect spin qubits in silicon carbide

(2011) William F. Koehl et al.   NATURE

Quantum computers

(2010) T. D. Ladd et al.   NATURE

Time-dependent density functional study on the excitation spectrum of point defects in semiconductors

(2010) Adam Gali   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Accurate defect levels obtained from the HSE06 range-separated hybrid functional

(2010) Peter Deák et al.   PHYSICAL REVIEW B

Many-Body Effects in the Excitation Spectrum of a Defect in SiC

(2010) Michel Bockstedte et al.   PHYSICAL REVIEW LETTERS

Quantum computing with defects

(2010) J. R. Weber et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Spin-Light Coherence for Single-Spin Measurement and Control in Diamond

(2010) B. B. Buckley et al.   SCIENCE

Ultralong spin coherence time in isotopically engineered diamond

(2009) Gopalakrishnan Balasubramanian et al.   NATURE MATERIALS

Identification of individualC13isotopes of nitrogen-vacancy center in diamond by combining the polarization studies of nuclear spins and first-principles calculations

(2009) Adam Gali   PHYSICAL REVIEW B

Photoluminescence study of the carbon antisite-vacancy pair in4H- and6H-SiC

(2009) J. W. Steeds   PHYSICAL REVIEW B

FullyAb InitioFinite-Size Corrections for Charged-Defect Supercell Calculations

(2009) Christoph Freysoldt et al.   PHYSICAL REVIEW LETTERS