Tuning the electronic properties of Ti–MoS2 contacts through introducing vacancies in monolayer MoS2

Defect-Dominated Doping and Contact Resistance in MoS2

(2014) Stephen McDonnell et al.   ACS Nano

MoS2 Field-Effect Transistor for Next-Generation Label-Free Biosensors

(2014) Deblina Sarkar et al.   ACS Nano

High-performance MoS2 transistors with low-resistance molybdenum contacts

(2014) Jiahao Kang et al.   APPLIED PHYSICS LETTERS

Effect of vacancies on structural, electronic and optical properties of monolayer MoS2: A first-principles study

(2014) Li-ping Feng et al.   JOURNAL OF ALLOYS AND COMPOUNDS

First-principles investigations on vacancy formation and electronic structures of monolayer MoS2

(2014) Li-ping Feng et al.   MATERIALS CHEMISTRY AND PHYSICS

Electrical Characteristics of Multilayer MoS2 FET’s with MoS2/Graphene Heterojunction Contacts

(2014) Joon Young Kwak et al.   NANO LETTERS

A first-principle investigation of double-side CVD catalyst metal/graphene contacts

(2014) Xiang Ji et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe2 Field Effect Transistors

(2013) Wei Liu et al.   NANO LETTERS

Measurement of mobility in dual-gated MoS2 transistors

(2013) Michael S. Fuhrer et al.   Nature Nanotechnology

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Control of valley polarization in monolayer MoS2 by optical helicity

(2012) Kin Fai Mak et al.   Nature Nanotechnology

Designing Electrical Contacts toMoS2Monolayers: A Computational Study

(2012) Igor Popov et al.   PHYSICAL REVIEW LETTERS

Single-Layer MoS2 Phototransistors

(2011) Zongyou Yin et al.   ACS Nano

Mechanical and Electronic Properties of MoS2 Nanoribbons and Their Defects

(2011) C. Ataca et al.   Journal of Physical Chemistry C

Visibility of dichalcogenide nanolayers

(2011) M M Benameur et al.   NANOTECHNOLOGY

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Improved Description of the Structure of Molecular and Layered Crystals: Ab Initio DFT Calculations with van der Waals Corrections

(2010) Tomáš Bučko et al.   JOURNAL OF PHYSICAL CHEMISTRY A

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

First-principles study of the interaction and charge transfer between graphene and metals

(2009) P. A. Khomyakov et al.   PHYSICAL REVIEW B

Doping Graphene with Metal Contacts

(2008) G. Giovannetti et al.   PHYSICAL REVIEW LETTERS