Journal
JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume 357, Issue 1, Pages 157-160Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2010.10.028
Keywords
Amorphous semiconductors; Chalcogenides; Multilayers; Ellipsometry
Funding
- Research Centre (University of Pardubice) [LC 523, 203/08/P204]
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We have fabricated a dielectric reflector and a passband filter, both with first order photonic bandgaps in the middle-infrared region around lambda = 4 mu m. The devices were made from alternating amorphous Ge(25)S(75) and Ge(15)Te(85) chalcogenide films with high transparency in the middle infrared region stacked in multilayers. Due to high thickness accuracy and periodicity of prepared multilayers we also observed second order photonic bandgaps at lambda similar to 1.4 mu m. The experimental data were in good agreement with theoretical predictions. The work focused on investigation of compositional homogeneity. surface roughness, thermal and optical properties of individual amorphous Ge(25)S(75) and Ge(15)Te(85) films. We confirmed chalcogenide materials as being of suitable choice for designing middle-infrared quarter wave stack devices. FT-IR reflectance spectra confirmed occurrence of 99.4% stopband near X = 4 mu m for fabricated reflector and narrow similar to 50% passband of prepared filter near lambda = 3.934 mu m. (C) 2010 Elsevier B.V. All rights reserved.
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