Journal
JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume 357, Issue 1, Pages 121-125Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jnoncrysol.2010.10.001
Keywords
Hydrogenated nanocrystalline silicon; Buffer layer; i/p interface; Solar cells
Funding
- National Basic Research Program of China [2006CB202604]
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We develop a double-layer p-type hydrogenated nanocrystalline silicon (p-nc-Si:H) structure consisting of a low hydrogen diluted i/p buffer layer and a high hydrogen diluted p-layer to improve the hydrogenated amorphous silicon (a-Si:H) n-i-p solar cells. The electrical, optical and structural properties of p-nc-Si:H films with different hydrogen dilution ratio (R(H)) are investigated. High conductivity, low activation energy and wide band gap are achieved for the thin films. Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM) analyses indicate that the thin films contain nanocrystallites with grain size around 3-5 nm embedded in the amorphous silicon matrix. By inserting a p-nc-Si:H buffer layer at the i/p interface, the overall performance of the solar cell is improved significantly compared to the bufferless cell. The improvement is correlated with the reduction of the density of defect states at the i/p interface. (C) 2010 Elsevier B.V. All rights reserved.
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