Electrical properties of Al/p–Ge and Al/Methyl Green/p–Ge diodes

Effect of temperature on the current (capacitance and conductance)–voltage characteristics of Ti/n-GaAs diode

(2014) K. Ejderha et al.   JOURNAL OF APPLIED PHYSICS

Fabrication and electrical characterization of Au/Pyronine-G/p-Si diode

(2014) S. Duman et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Current–Voltage and Capacitance–Conductance–Voltage Characteristics of Al/SiO2/p-Si and Al/Methyl Green (MG)/p-Si Structures

(2014) Songül Duman et al.   METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE

The modification of Schottky barrier height of Au/p-Si Schottky devices by perylene-diimide

(2013) Ö. F. Yüksel et al.   JOURNAL OF APPLIED PHYSICS

Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

(2012) Zhiqiang Li et al.   IEEE ELECTRON DEVICE LETTERS

Physical properties of Co/n-Ge Schottky contacts

(2011) L Lajaunie et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Structural, optical and electrical properties of n-ZnO/p-Si heterojunction prepared by ultrasonic spray

(2011) N. Zebbar et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Current–voltage temperature characteristics of Au/n-Ge (100) Schottky diodes

(2011) Albert Chawanda et al.   PHYSICA B-CONDENSED MATTER

Effect of atomically controlled interfaces on Fermi-level pinning at metal/Ge interfaces

(2010) K. Yamane et al.   APPLIED PHYSICS LETTERS

Fermi level depinning at the germanium Schottky interface through sulfur passivation

(2010) Arun V. Thathachary et al.   APPLIED PHYSICS LETTERS

Characterization of AZO/p-Si heterojunction prepared by DC magnetron sputtering

(2010) He Bo et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

The current–voltage–temperature characteristics of Al/NPB/p-Si contact

(2010) Wen-Chang Huang et al.   MICROELECTRONIC ENGINEERING

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

(2009) Masaharu Kobayashi et al.   JOURNAL OF APPLIED PHYSICS

Thermal stability study of palladium and cobalt Schottky contacts on n-Ge (100) and defects introduced during contacts fabrication and annealing process

(2009) A. Chawanda et al.   PHYSICA B-CONDENSED MATTER

Current–voltage and capacitance–voltage characteristics of a Sn/Methylene Blue/p-Si Schottky diode

(2009) Y.S. Ocak et al.   SYNTHETIC METALS

Ohmic contact formation on n-type Ge

(2008) R. R. Lieten et al.   APPLIED PHYSICS LETTERS

Temperature variation of current–voltage characteristics of Au/Ni/n-GaN Schottky diodes

(2008) S. Doğan et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Thermionic field emission at electrodeposited Ni–Si Schottky barriers

(2008) M.E. Kiziroglou et al.   SOLID-STATE ELECTRONICS

Laterally inhomogeneous barrier analysis of the methyl violet/p-Si organic/inorganic hybrid Schottky structures

(2007) Ö. Güllü et al.   APPLIED SURFACE SCIENCE

The effects of the temperature and annealing on current–voltage characteristics of Ni/n-type 6H–SiC Schottky diode

(2007) A. Sefaoğlu et al.   MICROELECTRONIC ENGINEERING