Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 14, Issue 12, Pages 8999-9004Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2014.10063
Keywords
Photoluminescence (PL); SiGe; Characterization; Misfit Dislocations
Categories
Funding
- Korea Research Foundation (KRF) - Korea government (MEST) [2012R1A1A2008591]
- Human Resources Development program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) - Korea government Ministry, of Trade, Industry and Energy [20124010203280]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20144030200580] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
Si1-xGex epitaxial layers with various Ge fractions sample were characterized by photoluminescence intensity method at room temperature. Photoluminescence intensity was affected by minority carrier lifetime, defect density, and surface condition. PL intensity profile showed misfit dislocation on epitaxial layer for 15%, 21%, 24%, and 26%, since dislocations were one of minority carrier lifetime degradation parameters. It clearly showed misfit dislocation profiles, cross-hatch, and PL intensity was low at dislocation region.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
