Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 13, Issue 10, Pages 6730-6734Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2013.7752
Keywords
Graphene; Carbon Nanotube; TCVD; Hybrid Nanostructure; FETs
Categories
Funding
- WCU program (World Class University) [R31-2008-000-10029-0]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) [2011-0004421]
- Ministry of Education, Science and Technology (MEST)
- Converging Research Center Program through the Ministry of Education, Science and Technology [2012K001305]
Ask authors/readers for more resources
The gapless semimetallic nature of graphene-based nanoelectronics is a major hurdle for the advancement of graphene-based field-effect transistors. Here graphene-carbon nanotubes hybrid nanostructures (Gr-CNTs HNSs) were formed by synthesizing single-walled carbon nanotubes (SWCNTs) with a bandgap on monolayer graphene by thermal chemical vapor deposition. We systematically established optimum conditions for the synthesis of Gr-CNTs HNSs by adjusting catalytic layer formation. The structural features of Gr-CNTs HNSs were investigated by scanning electron microscopy and Raman spectroscopy. The surface morphologies and chemical states of the catalytic films used to optimize Gr-CNTs HNSs synthesis were explored by atomic force microscopy and X-ray photoelectron spectroscopy. In this process, graphene played a role as a barrier to prevent Fe nanoparticles from interdiffusing into Al2O3 layer. Based on these studies, we determined the catalytic structure (Fe/Graphene/Al2O3/SiO2) optimal for growing high-density SWCNTs on monolayer graphene. Electrical transport measurements revealed that Gr-CNTs HNSs exhibited p-type semiconducting behavior with combined properties of graphene and CNTs.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available