Journal
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume 11, Issue 1, Pages 791-795Publisher
AMER SCIENTIFIC PUBLISHERS
DOI: 10.1166/jnn.2011.3169
Keywords
Nonvolatile Memory Device; Operating Mechanisms; Ag Nanoparticle; PMMA; C-V; Hysteresis
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Nonvolatile memory devices based on a polymethylmethacrylate (PMMA) layer containing Ag nanoparticles were formed by using a spin coating method. High-resolution transmission electron microscopy images showed that Ag nanoparticles were randomly distributed in the PMMA layer. Capacitance voltage (C-V) curves for the Al/Ag nanoparticles embedded in a PMMA layer/p-Si(100) device at 300 K showed a hysteresis with a large flat-band voltage shift, indicative of the Ag nanoparticles acting as the charge storage in the memory device. The magnitude of the flat-band voltage shift for the memory devices increased with increasing Ag nanoparticle concentration. The operating mechanisms for the writing and the erasing processes for the Al/Ag nanoparticles embedded in a PMMA layer/p-Si(100) device are described on the basis of the C-V results and electronic structures.
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