Journal
JOURNAL OF NANOPARTICLE RESEARCH
Volume 13, Issue 2, Pages 587-595Publisher
SPRINGER
DOI: 10.1007/s11051-010-0054-8
Keywords
X-ray photoelectron spectroscopy; Raman spectroscopy; Germanium nanocrystals; Charge injection
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Funding
- DRDO
- DST
- Council of Scientific and Industrial Research, Government of India
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We have grown Ge nanocrystals (NCs) (4.0-9.0 nm in diameter) embedded in high-k HfO2 matrix for applications in floating gate memory devices. X-ray photoelectron spectroscopy has been used to probe the local chemical bonding of Ge NCs. The analysis of Ge-Ge phonon vibration using Raman spectroscopy has shown the formation of compressively stressed Ge NCs in HfO2 matrix. Frequency dependent electrical properties of HfO2/Ge-NCs in HfO2/HfO2 sandwich structures have been studied. An anticlockwise hysteresis in the capacitance-voltage characteristics suggests electron injection and trapping in embedded Ge NCs. The role of interface states and deep traps in the devices has been thoroughly examined and has been shown to be negligible on the overall device performance.
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