Article
Chemistry, Physical
Donglin Huang, Ruoyun Ji, Liqiang Yao, Jinlong Jiao, Xiaoqiang Chen, Cheng Li, Wei Huang, Songyan Chen, Shaoying Ke
Summary: This study reports the nucleation of dislocations in Ge/Si bonded pairs annealed at low temperatures (≤400 degrees C), revealing two types of dislocation networks near the bonded interface. Thermal stress is identified as the main driving force for dislocation nucleation, with the annealing temperature impacting the type and distribution of dislocations. A kinetic model is constructed to explain the strain relaxation process and dislocation behavior, showing that heterogeneous nucleation dominates at low annealing temperatures while a multiplication mechanism becomes active at elevated temperatures.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Jiahui Yao, Chao Cheng, Han Xue, Xingyu Li, Yulan Lu, Bo Xie, Junbo Wang, Deyong Chen, Jian Chen
Summary: This article presents a high-sensitivity resonant differential pressure microsensor based on wafer-level eutectic bonding. The microsensor includes dual resonators embedded in the pressure-sensitive diaphragm and a silicon cap to form a vacuum cavity. Differential pressures cause deflections of the diaphragm and result in shifts in resonant frequencies. The microsensor exhibits excellent performance with a differential pressure sensitivity of 181.53 Hz/kPa and a maximum fitting error of less than 80 Pa.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Engineering, Electrical & Electronic
Pierre Montmeat, Jerome Dechamp, Gregory Enyedi, Frank Fournel, Zacharoula Zavvou, Vincent Jousseaume
Summary: In this study, ultra-thin iCVD polysiloxane films were proposed as adhesives for silicon wafer bonding. It was found that the thickness and elaboration temperature of the polymer had no significant impact on bonding properties, but an increase in bonding temperature led to stronger adherence.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Mark Ferguson, Mohamed Najah, Frederic A. Banville, Mohamed Boucherit, Paul Gond-Charton, Jacques Renaud, Luc Frechette, Francois Boone, Serge Ecoffey, Serge A. Charlebois
Summary: This study explores the compatibility of Ru with Al-Ge eutectic wafer bonding. Experimental results show that Ru is stable and offers good melt wettability in the presence of Al and Ge. The melting temperature of Al-Ge eutectic is found to decrease slightly in the presence of Ru contamination within a specific range. Wafer-level packaged devices and MEMS with Ru contacts demonstrate strong bond outcomes. These findings suggest that Ru has high compatibility with Al-Ge eutectic bonding.
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
(2022)
Article
Chemistry, Analytical
Youngseok Lee, Yebin You, Chulhee Cho, Sijun Kim, Jangjae Lee, Minyoung Kim, Hanglim Lee, Youngjun You, Kyungman Kim, ShinJae You
Summary: Direct wafer bonding is a promising technique for next-generation semiconductor devices, with plasma playing a crucial role in lowering process temperatures. This study evaluates the various process steps of Si-SiO2 wafer bonding through experimental studies, showing the need for optimizing plasma conditions and considering factors like time intervals between steps. The results suggest a trade-off between bonding strengths and interfacial voids with increasing input power for plasma treatment, highlighting the importance of thorough research to maximize bonding strengths.
Article
Chemistry, Analytical
Seyed Amir Fouad Farshchi Yazdi, Matteo Garavaglia, Aldo Ghisi, Alberto Corigliano
Summary: A study was conducted on a thermo-mechanical wafer-to-wafer bonding process to evaluate the effect of residual stresses on wafer warpage. Experimental and numerical methods were used to characterize the material and validate the model.
Article
Nanoscience & Nanotechnology
Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Hitoshi Umezawa, Eiji Higurashi
Summary: Direct bonding of diamond (100) substrate and silicon wafer was achieved at 250 degrees C under atmospheric conditions, preserving the crystallinity and achieving successful bonding. By applying pressure and appropriate treatment steps, complete bonding was achieved, despite the presence of some contaminated areas.
SCRIPTA MATERIALIA
(2021)
Article
Engineering, Electrical & Electronic
Qiwen Zheng, Jiangwei Cui, Xuefeng Yu, Yudong Li, Wu Lu, Chengfa He, Qi Guo
Summary: This article investigates the impact of Total Ionizing Dose (TID) on the within-wafer variability of Radiation-Hardened (RH) Silicon-on-Insulator (SOI) wafers. The experimental results show a complex dependence of the within-wafer variability on TID, influenced by positively charged silicon nanoclusters introduced by silicon ion implantation. Additionally, a radiation hardness assurance method based on sample testing of limited wafer locations is discussed for reasonable estimation of within-wafer variability on TID irradiated devices.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2021)
Article
Multidisciplinary Sciences
Myungjae Lee, Hanyu Hong, Jaehyung Yu, Fauzia Mujid, Andrew Ye, Ce Liang, Jiwoong Park
Summary: This paper reports three-atom-thick waveguides, called delta waveguides, based on wafer-scale molybdenum disulfide (MoS2) monolayers, which can guide visible and near-infrared light over millimeter-scale distances with low loss and efficient in-coupling. The extreme thinness of the waveguides enables a light-trapping mechanism similar to a delta-potential well in quantum mechanics, allowing for guided waves that propagate freely along the in-plane direction but are confined along the out-of-plane direction. The integration of thin-film optical components with delta waveguides demonstrates key functionalities essential for two-dimensional photonics.
Article
Multidisciplinary Sciences
He Ma, Xiao Xiao, Yu Wang, Yufei Sun, Bolun Wang, Xinyu Gao, Enze Wang, Kaili Jiang, Kai Liu, Xinping Zhang
Summary: By using a nano-pinhole permeation-etching strategy, wafer-scale freestanding VO2 films have been successfully prepared within 6 minutes, showing advantages in integration with other materials and retaining their metal-to-insulator transition and mechanical properties. These films can be conformably transferred to arbitrary substrates and integrated into diverse large-scale smart devices with low insertion loss, fast response, and low triggering power.
Article
Engineering, Manufacturing
Wei Feng, Haruo Shimamoto, Tsuyoshi Kawagoe, Ichirou Honma, Masato Yamasaki, Fumitake Okutsu, Takatoshi Masuda, Katsuya Kikuchi
Summary: Wafer warpage adversely affects device yield, performance, and reliability by affecting photolithography resolution, process alignment, and wafer bonding. The increase in metal layers exacerbates the warpage problem. Through experiments and simulation, we investigate the warpage issue induced by the Wafer-to-Wafer (W2W) bonding process. The study reveals that the warpage induced by the W2W bonding process is three times the warpage of a single wafer and can be up to seven times in a multi-stack wafer bonding.
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
(2023)
Article
Physics, Applied
Takehiko Kikuchi, Munetaka Kurokawa, Naoki Fujiwara, Naoko Inoue, Takuo Hiratani, Toshiyuki Nitta, Takuya Mitarai, Yuhki Itoh, Chang-Yong Lee, Akira Furuya, Yoshitaka Oiso, Nobuhiko Nishiyama, Hideki Yagi
Summary: This study investigates the direct bonding process of InP chips on an SOI wafer using surface hydrophilization by UV-ozone treatment. The study finds that the treatment has negligible impact on surface roughness. The observation of a high-quality III-V/Si bonding interface without crystal defects is verified in a scanning transmission electron microscope observation. the study also fabricates Fabry-Perot lasers with III-V gain and Si waveguide regions using this bonding process, and achieves continuous operation at different temperatures.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Materials Science, Multidisciplinary
Roy Knechtel, Uwe Schwarz, Sophia Dempwolf, Holger Klingner, Andy Nevin, Gunnar Lindemann, Marc Schikowski
Summary: Wafer bonding is an essential process in microsystem technologies for engineered substrates and capping. While the focus has traditionally been on the main wafer area, recent advancements in MEMS technologies have highlighted the importance of engineering the wafer edge. This paper discusses methods for achieving this goal.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Nanoscience & Nanotechnology
Jani Kaaos, Glenn Ross, Mervi Paulasto-Krockel
Summary: This work explores the feasibility of using aluminum nitride as an alternative SOI structure for MEMS. Surface activation methods were utilized to enhance hydrophilicity and reduce surface roughness of the AIN, essential for successful wafer bonding. The results show promising tensile strength of the AIN alternative SOI structure, making it an attractive platform for MEMS applications.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Materials Science, Multidisciplinary
Yunqi Cao, Tongyu Wang, Nelson Sepulveda
Summary: A microfluidic thermal mass flow sensor using planar micro-machining technology and a phase-change material has been developed. By utilizing vanadium dioxide (VO2) thin film, no thermal insulation structure is needed due to the high thermal sensitivity in the phase transition region. The sensor exhibits a 3-order resistance change during heating and cooling cycles, with a maximum sensitivity of 1.383%/(mu L min(-1)). The research suggests the potential application of nonlinear metamaterials for highly sensitive microfluidic flow sensors.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
