Dielectric property and electrical conduction mechanism of ZrO2–TiO2 composite thin films

Composition dependence of band alignment and dielectric constant for Hf1−xTixO2 thin films on Si (100)

(2010) Cong Ye et al.   JOURNAL OF APPLIED PHYSICS

Improved thermal stability, interface, and electrical properties of HfO2 films prepared by pulsed laser deposition using in situ ionized nitrogen

(2009) Yi Wang et al.   APPLIED PHYSICS LETTERS

Atomic layer deposition of LaxZr1−xO2−δ (x=0.25) high-k dielectrics for advanced gate stacks

(2009) D. Tsoutsou et al.   APPLIED PHYSICS LETTERS

HfOxNy gate dielectric on p-GaAs

(2009) G. K. Dalapati et al.   APPLIED PHYSICS LETTERS

Thickness-modulated optical dielectric constants and band alignments of HfOxNy gate dielectrics

(2009) G. He et al.   JOURNAL OF APPLIED PHYSICS

Structure and electrical properties of HfO2 high-k films prepared by pulsed laser deposition on Si (100)

(2008) Hao Wang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectric

(2008) Yung-Hsien Wu et al.   APPLIED PHYSICS LETTERS

Interface control and leakage current conduction mechanism in HfO2 film prepared by pulsed laser deposition

(2008) Hao Wang et al.   APPLIED PHYSICS LETTERS