Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 23, Issue 1, Pages 185-192Publisher
SPRINGER
DOI: 10.1007/s10854-011-0380-3
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Funding
- Armament Research and Establishment Board, DRDO New Delhi [ARMREB/ASE/2008/87]
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A new lead-free perovskite Ba(Bi1/2Ta1/2)O-3 was prepared by conventional ceramic fabrication technique at 1,200 A degrees C/4 h in air atmosphere. The crystal symmetry, space group and unit cell dimensions were determined from the experimental results using FullProf software. The crystallite size and lattice strain were estimated from Williamson-Hall approach. XRD analysis of the compound indicated the formation of a single-phase cubic structure with the space group Pm3m. EDAX and SEM studies were carried out in order to evaluate the quality and purity of the compound. Permittivity data showed a low temperature coefficient of capacitance (T (CC) < 4%) up to +125 A degrees C. Complex impedance analyses suggested the dielectric relaxation to be of non-Debye type. Electric modulus studies supported the hopping type of conduction in Ba(Bi1/2Ta1/2)O-3.
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