1D-photonic crystals prepared from the amorphous chalcogenide films

We describe the preparation and optical properties of the 15-layer chalcogenide dielectric mirrors with the first order stop bands in near infrared range. The high refractive index Sb-Se and low refractive index Ge-S layers were deposited on silicon and glass substrates using thermal evaporation method. To centre the stop bands of the prepared chalcogenide mirrors at 1.55 mu m, the layer thicknesses, d(Sb-Se) = 117 and d(Ge-S) = 183 nm, were calculated from the quarter wave stack condition. The optical reflectivity measurements revealed the total reflection from the 15-layer chalcogenide mirrors in the range of 1,400-1,600 nm for the unpolarized light with normal incidence. The effect of annealing on the optical properties of the prepared chalcogenide mirrors was studied as well. Using spectral ellipsometry, we examined the angular dependence of the multilayers reflectivity for the light with s- and p-polarization. The preparation of the dielectric mirrors for near infrared region from chalcogenide films seems to be possible exploiting good optical quality of chalcogenide films and their simple deposition.