How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy

The effect of grain boundary characteristics on the morphology of the crystal/melt interface of multicrystalline silicon

(2013) Kozo Fujiwara et al.   SCRIPTA MATERIALIA

Challenges to Quantitative Multivariate Statistical Analysis of Atomic-Resolution X-Ray Spectral

(2012) Paul G. Kotula et al.   MICROSCOPY AND MICROANALYSIS

First-Principles Calculations on Σ3 Grain Boundary Transition Metal Impurities in Multicrystalline Silicon

(2010) Ambigapathy Suvitha et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Structure and effects of vacancies in Σ3 (112) grain boundaries in Si

(2009) C. B. Feng et al.   JOURNAL OF APPLIED PHYSICS

XEDS with SDD-Technology in Scanning Transmission Electron Microscopy

(2009) M Falke et al.   MICROSCOPY AND MICROANALYSIS

An integrated Silicon Drift Detector System for FEI Schottky Field Emission Transmission Electron Microscopes

(2009) HS von Harrach et al.   MICROSCOPY AND MICROANALYSIS

Atomic-Scale Chemical Imaging of Composition and Bonding by Aberration-Corrected Microscopy

(2008) D. A. Muller et al.   SCIENCE

EELS analysis of {111} Σ3 and {112} Σ3 twin boundaries and their junctions in phosphor-doped cast polycrystalline silicon

(2007) Isamu Kuchiwaki et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS