Journal
JOURNAL OF MATERIALS SCIENCE
Volume 45, Issue 19, Pages 5218-5222Publisher
SPRINGER
DOI: 10.1007/s10853-010-4561-x
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Funding
- U.S. Department of Energy [DE-AC36-08GO28308]
- National Research Foundation of Korea [과C6B1910] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Ga-N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N-2 and O-2 gas ambient. We found that Ga-N co-doped ZnO films exhibited enhanced crystallinity when compared to undoped ZnO films grown under the same conditions. Furthermore, Ga-N co-doping ensured enhanced N-incorporation ZnO thin films as the substrate temperature is increased. As a result, Ga-N co-doped ZnO thin films exhibited much improved photoelectrochemical (PEC) response, compared to ZnO thin films. Our results therefore suggest that the passive co-doping approach could be a means to improve PEC response for bandgap-reduced wide-bandgap oxides through impurity incorporation.
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