Metallization strategies for In2O3-based amorphous oxide semiconductor materials
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Title
Metallization strategies for In2O3-based amorphous oxide semiconductor materials
Authors
Keywords
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Journal
JOURNAL OF MATERIALS RESEARCH
Volume 27, Issue 17, Pages 2299-2308
Publisher
Cambridge University Press (CUP)
Online
2012-07-03
DOI
10.1557/jmr.2012.141
References
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Related references
Note: Only part of the references are listed.- On the effect of Ti on the stability of amorphous indium zinc oxide used in thin film transistor applications
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- Amorphous structure and electrical performance of low-temperature annealed amorphous indium zinc oxide transparent thin film transistors
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- Role of silicon in silicon-indium-zinc-oxide thin-film transistor
- (2010) Eugene Chong et al. APPLIED PHYSICS LETTERS
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- An investigation of contact resistance between metal electrodes and amorphous gallium–indium–zinc oxide (a-GIZO) thin-film transistors
- (2010) Woong-Sun Kim et al. THIN SOLID FILMS
- Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor
- (2009) Ayumu Sato et al. APPLIED PHYSICS LETTERS
- Carrier concentration dependence of Ti∕Au specific contact resistance on n-type amorphous indium zinc oxide thin films
- (2008) Wantae Lim et al. APPLIED PHYSICS LETTERS
- Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
- (2008) Kenji Nomura et al. APPLIED PHYSICS LETTERS
- Control of threshold voltage in ZnO-based oxide thin film transistors
- (2008) Jin-Seong Park et al. APPLIED PHYSICS LETTERS
- High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes
- (2008) Jong H. Na et al. APPLIED PHYSICS LETTERS
- General mobility and carrier concentration relationship in transparent amorphous indium zinc oxide films
- (2008) Andrew J. Leenheer et al. PHYSICAL REVIEW B
- Specific contact resistances between amorphous oxide semiconductor In–Ga–Zn–O and metallic electrodes
- (2007) Yasuhiro Shimura et al. THIN SOLID FILMS
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