Journal
JOURNAL OF MATERIALS RESEARCH
Volume 26, Issue 21, Pages 2744-2748Publisher
CAMBRIDGE UNIV PRESS
DOI: 10.1557/jmr.2011.313
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Funding
- Defense Advanced Research Project Agency [N66001-08-1-2037]
- Korean Research Foundation
- Korean Government [KRF-2007-357-D00022]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0907483] Funding Source: National Science Foundation
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1120577] Funding Source: National Science Foundation
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The direct integration of Ge nanowires with silicon is of interest in multiple applications. In this work, we describe the growth of high-quality, vertically oriented Ge nanowires on Si (111) substrates utilizing a completely sub-Au-Si-eutectic annealing and growth procedure. With all other conditions remaining identical, annealing below the Au-Si eutectic results in successful heteroepitaxial nucleation and growth of Ge nanowires on Si substrate while annealing above the Au-Si eutectic leads to randomly oriented growth. A model is presented to elucidate the effect of the annealing temperature, in which we hypothesized that sub-Au-Si-eutectic annealing leads to the formation of a single and well-oriented interface, essential to template heteroepitaxial nucleation. These results are critically dependent on substrate preparation and lead to the creation of integrated nanowire systems with a low thermal budget process.
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