Journal
JOURNAL OF MATERIALS RESEARCH
Volume 23, Issue 9, Pages 2506-2511Publisher
CAMBRIDGE UNIV PRESS
DOI: 10.1557/JMR.2008.0309
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Funding
- Industrial Technology Research Institute
- Micro/Nano Science and Technology of the National Cheng Kung University
- National Science Council of Taiwan, Republic of China
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A co-sputtering system was used to deposit silicon nanoclusters embedded in zinc oxide matrix (Si:ZnO) at low temperature without post-annealing. By adjusting the radio frequency power of the Si target during co-sputtering, SI:ZnO films with various crystallographic structures can be obtained. Silicon nanoclusters embedded in the zinc oxide matrix were examined using a high-resolution transmission electron microscope, x-ray diffractometer, and Fourier transformation infrared spectrometry. By comparing with photoluminescence spectra, we can clearly identify quantum confinement effect of silicon nanoclusters embedded in the ZnO matrix.
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