4.3 Article

Ultra low dielectric constant hybrid films via side chain grafting reaction of poly(ether ether ketone) and phosphotungstic acid

Journal

JOURNAL OF MATERIALS CHEMISTRY
Volume 22, Issue 44, Pages 23534-23540

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c2jm35040h

Keywords

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Funding

  1. National Nature Science Foundation of China [51073066]
  2. Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China

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The novel ultra low dielectric constant poly(ether ether ketone) hybrid films in which nanoscale phosphotungstic acid (PWA) clusters were grafted onto the side chains of poly(ether ether ketone) containing (3-trifluoromethyl) phenyl groups and carboxyl groups (PEEK-CF3-COOH) in the presence the silane coupling agent gamma-aminopropyltriethoxysilane (KH-550) were prepared and characterized. The chemical structures of the PWA/PEEK-CF3-COOH hybrid films were confirmed by FT-IR spectroscopy and H-1-NMR. The analysis of wide-angle X-ray diffraction (WAXD) indicated that the PWA clusters could not form crystalline structures in the PEEK-CF3-COOH matrix, and the investigation of the scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS) (W-mapping) revealed that the PWA particles were well dispersed in the PEEK-CF3-COOH matrix with nanoscale. The influence of the incorporation of PWA particles by side chain grafting reaction on the properties of PEEK-CF3-COOH was studied. The dielectric constants of the PWA/PEEK-CF3-COOH hybrid films were remarkably lower than that of the neat PEEK-CF3-COOH film and the lowest value their dielectric constant could achieve was as low as 1.96 (1 MHz) when the content of grafted PWA reached 10 wt%. Meanwhile, the hybrid films still retain the excellent thermal and mechanical properties as well as the good transparency.

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