Journal
PARTICLE & PARTICLE SYSTEMS CHARACTERIZATION
Volume 32, Issue 12, Pages 1078-1082Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/ppsc.201500174
Keywords
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Funding
- Natural Science Foundation of China [51304062, 21403056, U1404202]
- Program for Innovative Research Team in Science and Technology in University of Henan Province (IRTSTHN) [2012IRTSTHN004]
- Research Plan for Natural Science in the Education Department of Henan Province [13B150920]
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CdSeS quantum dots (QDs) are firstly introduced into a NiO photocathode for photocathodic dye-sensitized solar cells (p-DSCs). The optimized sample exhibits a short-circuit density (14.68 mA cm(-2)) and power conversion efficiency (1.02%) that are almost one order of magnitude higher than the reported value of p-QDSCs. Steady-state photoluminescence and time-resolved photoluminescence measurements indicate that the photoexcited holes can be almost completely injected from CdSeS QDs into the valence band of NiO. At the same time, it can be observed from electrochemical impedance spectra measurements.
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