Journal
JOURNAL OF LUMINESCENCE
Volume 134, Issue -, Pages 853-857Publisher
ELSEVIER
DOI: 10.1016/j.jlumin.2012.06.037
Keywords
Silicon oxynitride; Bonding structure; Photoluminescence; Electroluminescence; Reactive sputtering
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Funding
- ROC National Science Council [NCS 98-2221-E-011-040-MY2]
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Silicon oxynitride (SiOxNy) films were prepared on silicon (Si) substrates by reactive sputtering of Si followed by vacuum annealing at 900 degrees C for 1 h. Structures and composition of the SiOxNy films were analyzed by x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy. The annealed SiOxNy films were amorphous and composed of mixed Si-N and Si-O bonds. Blue and green emissions were observed in the photoluminescence (PL) spectra of these annealed SiOxNy films. The intensity ratios of blue/green PL increased with the intensity ratios of the decomposed Si 2 p peaks corresponding to Si-N and O-Si-N bonds. At last, electroluminescence (EL) was demonstrated in the SiOxNy/Si specimens with an indium-tin-oxide top electrode and an Al bottom electrode. (c) 2012 Elsevier B.V. All rights reserved.
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