Journal
JOURNAL OF LUMINESCENCE
Volume 131, Issue 8, Pages 1645-1648Publisher
ELSEVIER
DOI: 10.1016/j.jlumin.2011.04.016
Keywords
Metal-organic chemical vapor deposition; MgZnO; Electroluminescence
Categories
Funding
- National Natural Science Foundation of China [61006006, 60877020, 60976010]
- 973 program [2011CB30200001]
- Science and Technology Development project in Jilin province [20100170]
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ZnO-based heterojunction light emitting diodes (LEDs) with MgZnO barrier layer had been fabricated on the p-Si substrate by metal-organic chemical vapor deposition (MOCVD) technology. The current-voltage (I-V) characteristics exhibited a typical p-n diode behavior. Both ultraviolet (UV) and visible emissions could be detected in the electroluminescence (EL) measurement. The result was compared with the EL spectrum of n-ZnO/p-Si heterojunction LED without MgZnO barrier layer. An improved light extraction efficiency by about 31% was realized owing to the current-blocking effect of MgZnO layer. The result indicated that MgZnO barrier layer can prevent the electrons as expected and realize electron-hole recombination in ZnO layer effectively. (C) 2011 Elsevier B.V. All rights reserved.
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