4.7 Article

Optimization and Demonstration of a Large-bandwidth Carrier-depletion Silicon Optical Modulator

Journal

JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 31, Issue 24, Pages 4119-4125

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2013.2287671

Keywords

High speed; optical interconnects; optical modulation; silicon modulators

Funding

  1. Natural Science Foundation of Shanghai [11ZR1443700]
  2. Science and Technology Commission of Shanghai Municipality [10DJ1400400 10706200500]
  3. 863 Project [2012AA012202]
  4. Natural Science Foundation of China [61106051, 61107031, 61275112]

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We present the design, fabrication, and measurement of a high-speed carrier-depletion silicon optical modulator based on Mach-Zehnder Interferometer structure. Based on an equivalent circuit model, the traveling-wave electrode size and doping concentration of the PN junction are optimized to achieve a large modulation bandwidth. The modulation efficiency and optical loss at different positions of the PN junction are also simulated. The device is fabricated on silicon-on-insulator (SOI) with 0.13 mu m CMOS technology. An insertion loss of 3.9 dB (resp. 6.2 dB) and a V pi L pi of 1.62-2.05 V.cm (resp. 1.47-1.97 V.cm) are experimentally realized for 1 mm ( resp. 2 mm) long phase shifter. By small signal measurement, the modulator exhibits a 3 dB bandwidth of 30 GHz and 19 GHz for 1 mm and 2 mm long phase shifter, respectively, which agrees well with the simulation results. The optical eye diagram with data rate up to 44 Gb/s is also demonstrated, showing potential in the application of high-speed optical interconnects.

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