Determination of Oxygen Concentration in Heavily Doped Silicon Wafer by La-ser Induced Breakdown Spectroscopy

Published 2010 View Full Article

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Title
Determination of Oxygen Concentration in Heavily Doped Silicon Wafer by La-ser Induced Breakdown Spectroscopy
Authors
Keywords
-
Journal
JOURNAL OF INORGANIC MATERIALS
Volume 25, Issue 8, Pages 893-896
Publisher
China Science Publishing & Media Ltd.
Online
2010-08-19
DOI
10.3724/sp.j.1077.2010.10074

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