Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

Published 2015 View Full Article

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Title
Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture
Authors
Keywords
Nonvolatile memory, Organic resistive memory, ZnO–Graphene quantum dot, One diode-one resistor architecture
Journal
ORGANIC ELECTRONICS
Volume 18, Issue -, Pages 77-83
Publisher
Elsevier BV
Online
2015-01-15
DOI
10.1016/j.orgel.2015.01.010

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