Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers

Title
Multilevel characteristics and operating mechanisms of nonvolatile memory devices based on a floating gate of graphene oxide sheets sandwiched between two polystyrene layers
Authors
Keywords
Nonvolatile memory devices, Graphene oxide, Polystyrene, C, –, V, hysteresis, Multilevel
Journal
ORGANIC ELECTRONICS
Volume 25, Issue -, Pages 165-169
Publisher
Elsevier BV
Online
2015-06-20
DOI
10.1016/j.orgel.2015.06.028

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