Journal
OPTICS EXPRESS
Volume 23, Issue 2, Pages 642-648Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.23.000642
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- Dutch Technology Foundation STW
- Netherlands Organisation for Scientific Research (NWO)
- Ministry of Economic Affairs
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In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm. (C) 2015 Optical Society of America
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