Article
Nanoscience & Nanotechnology
Panagiota Kafourou, Zhuoran Qiao, Mate Toth, Filip Anies, Flurin Eisner, Nicola Gasparini, Martin Heeney
Summary: This study reports the synthesis of two molecular semiconductors with high electron affinity and strong absorption in the visible spectrum using the acceptor-donor-acceptor (A-D-A) approach. The performance of the materials depends on the nature of the solubilizing alkyl chain, with the branched acceptor showing optimum performance.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Cihyun Kim, Tae Jin Yoo, Kyoung Eun Chang, Min Gyu Kwon, Hyeon Jun Hwang, Byoung Hun Lee
Summary: The performance of a graphene/Ge Schottky junction near-infrared photodetector is significantly enhanced by inserting a thin Al2O3 interfacial layer between graphene and Ge. Dark current is reduced by two orders of magnitudes, and the specific detectivity is improved to 1.9 x 10(10) cm . Hz(1/2)W(-1). The responsivity is improved to 1.2 AW(-1) with an interfacial layer from 0.5 AW(-1) of the reference devices. The normalized photo-todark current ratio is improved to 4.3 x 10(7) W-1 at a wavelength of 1550 nm, which is 10-100 times higher than those of other Ge photodetectors.
Article
Materials Science, Ceramics
Jia-Yun Wei, Liang-Ping Shen, Zhuo-Cheng Zheng, Yong-Chang Xu, Hao Wu, Hai Zhou, Hao Wang
Summary: This paper reports dual strategies to reduce the dark current of hydrothermally fabricated Ga2O3 nanorod PDs. Through annealing treatment and coating, the dark current of the PDs is significantly reduced, resulting in improved on/off ratio and overall performance of the devices.
CERAMICS INTERNATIONAL
(2022)
Article
Chemistry, Multidisciplinary
Jianfei Huang, Jaewon Lee, Hidenori Nakayama, Max Schrock, David Xi Cao, Kilwon Cho, Guillermo C. Bazan, Thuc-Quyen Nguyen
Summary: The universal problem of detrimental sensitivity of dark current to illumination history in high-performance inverted OPDs poses challenges to achieving high sensitivity and consistent figures-of-merit. Through systematic studies, it has been shown that the exposure of commonly used electron transport layer to high-energy photons leads to the loss of charge selectivity, hindering the attainment of high sensitivity and consistent performance characteristics. The use of double layer tin oxide as an alternative electron transport layer has been demonstrated to solve this issue.
Article
Nanoscience & Nanotechnology
Hyeong Ju Eun, Hyojin Kye, Dahee Kim, In Su Jin, Jae Woong Jung, Seo-Jin Ko, Junseok Heo, Bong-Gi Kim, Jong H. Kim
Summary: The study demonstrated high-detectivity NIR OPDs at 900-950 nm by utilizing ITIC and PNIR for bulk heterojunction, suppressing dark current effectively.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Optics
Yuxuan Li, Xiaobin Liu, Xuetong Li, Lanxuan Zhang, Yingzhi Li, Baisong Chen, Zihao Zhi, Fengli Gao, Xueyan Li, Pengfei Guo, Xianshu Luo, Guoqiang Lo, Junfeng Song
Summary: In this study, an integrated waveguide-based Ge-on-Si APD with a lateral separate absorption charge multiplication (SACM) structure is proposed to improve detection sensitivity. The device operates at low bias voltage and demonstrates low dark current and practical dark count rate at room temperature. Theoretical single photon detection efficiency is also achieved, reducing the dependence on low-temperature working environment.
OPTICS COMMUNICATIONS
(2022)
Article
Materials Science, Multidisciplinary
Shu An, Yikai Liao, Sangho Shin, Munho Kim
Summary: The study demonstrates a method to fabricate high-performance Ge photodetectors on black Ge surface, achieving significant enhancement in light absorption through reducing reflection and introducing internal gain.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Materials Science, Multidisciplinary
Haewoon Seo, Hyeong Ju Eun, Donghyeuk Choi, Hyon Bin Na, Yeongseok Shim, Junseok Heo, Kyung-Sang Cho, Jong H. Kim, Sang-Wook Kim
Summary: Cationic-type dimetal diselenium perchlorate molecular metal chalcogenide complexes (M2Se2(ClO4)(2), M = Mn, Zn, and Sn) were developed and applied to stabilize colloidal quantum dots (QDs). The resulting M2Se2-PbS QDs were used to fabricate near-infrared photodetectors with low dark current densities, high responsivity, and excellent specific detectivity. In addition, hybrid-type QD films using cationic and anionic MCC-PbS QDs achieved a high external quantum efficiency.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Engineering, Electrical & Electronic
Zupin Liu, Chunshuang Chu, Bingxiang Wang, Guansen Huang, Ke Jiang, Yonghui Zhang, Xiaojuan Sun, Zi-Hui Zhang, Dabing Li
Summary: In this work, a metal/Ga2O3/AlGaN/GaN hybrid-structured metal-semiconductor-metal ultraviolet photodetector (MSM UV PD) with low dark current has been proposed and fabricated. The device exhibits low dark current due to the depletion region formed by the metal gate and the AlGaN layer. In the illumination condition, photogenerated electrons are efficiently collected by the device, resulting in a high photo-to-dark current ratio and detectivity.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Nanoscience & Nanotechnology
Hardhyan Sheoran, Shi Fang, Fangzhou Liang, Zhe Huang, Shuchi Kaushik, Nethala Manikanthababu, Xiaolong Zhao, Haiding Sun, Rajendra Singh, Shibing Long
Summary: This article reports on the fabrication of high-performance deep ultraviolet photodetectors (DUV PDs) on metal-organic chemical vapor deposition (MOCVD)-grown beta-Ga2O3 heteroepitaxy. The fabricated DUV PDs exhibit stable operation at high temperature, with an ultralow dark current and a high photo-to dark-current ratio. These DUV PDs show high detection sensitivity and potential for solar-blind detection applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Engineering, Electrical & Electronic
Bongkwon Son, Yiding Lin, Kwang Hong Lee, Joe Margetis, David Kohen, John Tolle, Chuan Seng Tan
Summary: This work demonstrates metal-semiconductor-metal photodetectors on the Ge0.91Sn0.09-on-insulator (GeSnOI) platform, with the potential to detect wavelengths beyond 2,200 nm, low dark current density, and high bandwidth.
IEEE PHOTONICS JOURNAL
(2022)
Article
Nanoscience & Nanotechnology
Mohammad M. Afandi, Jongsu Kim
Summary: A dual-mode device capable of emitting UV-A light and detecting solar-blind UV light was fabricated using a ZnGa2O4 (ZGO) film in a metal-oxide-semiconductor (MOS) structure. The device demonstrated bi-functionality by changing the electric configurations. This research provides a feasible method for developing multifunctional electronic devices based on MOS structure.
JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES
(2023)
Article
Instruments & Instrumentation
Kubra Circir, Serdar Kocaman
Summary: This study investigates the inclusion of an in-device passivation layer in mesa-based lattice-matched InGaAs photodetectors. The passivation layer reduces the dark current but increases electrical crosstalk. By adding a thin epilayer, the electrical field distribution can be manipulated to reduce inter-pixel carrier collection and improve the photo-response.
INFRARED PHYSICS & TECHNOLOGY
(2022)
Article
Chemistry, Multidisciplinary
Zhong-Xing Zhou, Ming-Jyun Ye, Min-Wen Yu, Jhen-Hong Yang, Kuan-Lin Su, Chung-Ching Yang, Cheng-Yeh Lin, Viktoriia E. Babicheva, Ivan V. Timofeev, Kuo-Ping Chen
Summary: In O-and C-band optical communications, Ge is a promising material for detecting optical signals that are encoded into electrical signals. This study investigates 2D periodic Ge metasurfaces that support optically induced electric dipole and magnetic dipole lattice resonances. By overlapping Mie resonances and electric dipole lattice resonances, the researchers realize the resonant lattice Kerker effect and achieve narrowband absorption. The absorptance of the Ge nanoantenna arrays increases 6-fold compared to that of the unpatterned Ge films. Additionally, the photocurrent in Ge metasurface photodetectors increases by approximately 5 times compared with that in plane Ge film photodetectors due to the interaction of these strong near-fields with semiconductors and the further transformation of the optical energy into electricity.
Article
Polymer Science
Zhitian Liu, Yixuan Chen, Yanchuan Hu, Jun Dong, Jing Wen, Jianhong Gao, Pengcheng Li
Summary: Subtle configuration changes in the side chains of two low-bandgap polymers can affect molecular alignment, film morphology, and photodetector performance, with the preferential edge-on orientation of PDTPN-? effectively reducing dark current density. These findings provide a new avenue for preparing high-performance polymer photodetectors with superior specific detectivity.
Article
Physics, Applied
Zejie Zheng, Xiao Yu, Min Xie, Ran Cheng, Rui Zhang, Yi Zhao
APPLIED PHYSICS LETTERS
(2016)
Article
Physics, Applied
R. Zhang, P. -C. Huang, N. Taoka, M. Yokoyama, M. Takenaka, S. Takagi
APPLIED PHYSICS LETTERS
(2016)
Article
Engineering, Electrical & Electronic
Rui Zhang, Xiaoyu Tang, Xiao Yu, Junkang Li, Yi Zhao
IEEE ELECTRON DEVICE LETTERS
(2016)
Article
Engineering, Electrical & Electronic
Rui Zhang, Junkang Li, Xiao Yu
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2017)
Article
Engineering, Electrical & Electronic
Ran Cheng, Xiao Yu, Bing Chen, Junfeng Li, Yiming Qu, Jinghui Han, Rui Zhang, Yi Zhao
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2017)
Article
Engineering, Electrical & Electronic
Junkang Li, Ran Cheng, Chang Liu, Pengzhan Zhang, Jiwu Lu, Kunji Chen, Rui Zhang, Yi Zhao
MICROELECTRONIC ENGINEERING
(2017)
Article
Engineering, Electrical & Electronic
Bing Chen, Yi Zhang, Wei Liu, Shun Xu, Ran Cheng, Rui Zhang, Yi Zhao
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Physics, Multidisciplinary
Junkang Li, Yiming Qu, Siyu Zeng, Ran Cheng, Rui Zhang, Yi Zhao
CHINESE PHYSICS LETTERS
(2018)
Article
Physics, Applied
Yukun Li, Rui Zhang
APPLIED PHYSICS LETTERS
(2019)
Article
Physics, Applied
Wangran Wu, Zejie Zheng, Weifeng Sun, Shun Xu, Junkang Li, Rui Zhang, Yi Zhao
APPLIED PHYSICS EXPRESS
(2019)
Article
Engineering, Electrical & Electronic
Zhuo Chen, Sicong Yuan, Junkang Li, Rui Zhang
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2019)
Article
Engineering, Electrical & Electronic
Min Xie, Peng Wang, Rui Zhang, Xiao Yu, Yi Zhao
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Sicong Yuan, Zhuo Chen, Junkang Li, Minzhi Tian, Rui Zhang
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Junkang Li, Zhuo Chen, Yiming Qu, Rui Zhang
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2020)
Article
Physics, Multidisciplinary
Yan-Yan Zhang, Ran Cheng, Shuang Xie, Shun Xu, Xiao Yu, Rui Zhang, Yi Zhao
CHINESE PHYSICS LETTERS
(2017)