Journal
OPTICS EXPRESS
Volume 23, Issue 22, Pages 28306-28315Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.23.028306
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Funding
- Air Force Office of Scientific Research (AFOSR) [FA9550-13-1-0032]
- GaTech Terabit Consortium
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High-speed electro-optic modulators are among the key elements in any optical interconnect system. In this work we design and demonstrate an electro-optic modulator based on carrier accumulation on a multilayer integrated photonic platform comprising a stack of high quality Si, SiO2, and Si layers. The device consists of a 3-mu m radius microdisk with an embedded capacitor. Characterization results reveal an operation bandwidth of exceeding 10 GHz. The device is capable of transmitting 15 Gb/s with the on/off keying format in a single polarization. The proposed structure can be self-trimmed by up to 1 nm in wavelength by applying a dc bias voltage without any power consumption. This feature eliminates the need for power-hungry thermal-based compensation methods to address the resonance wavelength mismatch due to fabrication imperfections. (C)2015 Optical Society of America
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