Defect Reduction in AlN Epilayers Grown by MOCVD via Intermediate-Temperature Interlayers

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

(2011) Myunghee Kim et al.   Applied Physics Express

Table of contents

(2010)   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer epitaxial buffer layer

(2008) L. W. Sang et al.   APPLIED PHYSICS LETTERS

High quality AlN grown on SiC by metal organic chemical vapor deposition

(2008) Z. Chen et al.   APPLIED PHYSICS LETTERS

Effect of dislocations on electrical and optical properties of n-type Al0.34Ga0.66N

(2008) K. X. Chen et al.   APPLIED PHYSICS LETTERS

Ultraviolet light-emitting diodes based on group three nitrides

(2008) Asif Khan et al.   Nature Photonics