Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 44, Issue 1, Pages 158-166Publisher
SPRINGER
DOI: 10.1007/s11664-014-3511-9
Keywords
HgCdTe; nBn detectors; barrier detectors; valence band energy barrier
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Funding
- Polish National Science Centre [DEC-2013/08/M/ST7/00913]
- Australian Research Council [DP120104835, FS110200022]
- WA-node of the Australian National Fabrication Facility
- Australian Research Council [FS110200022] Funding Source: Australian Research Council
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Design of practically realizable unipolar HgCdTe nBn photodetectors has been studied in detail by numerical analysis. The simulations reported herein reveal that, by optimization of barrier doping, dark current levels can be reduced and collection efficiency substantially improved. It is shown that p-type doping of the barrier layer can significantly reduce the effective potential barrier arising from the valence band offset between the absorber and barrier regions, thus enabling HgCdTe nBn detector operation under near zero-bias conditions. However, relatively high electric fields in the space charge regions near the barrier/absorber interface result in enhanced trap-assisted Shockley-Read-Hall thermal generation. Our calculations indicate that nBn HgCdTe detectors with barriers engineered by use of HgTe/Hg0.05Cd0.95Te superlattices have, potentially, substantially better valence band alignment without the need for p-type doping.
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