Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 43, Issue 7, Pages 2651-2657Publisher
SPRINGER
DOI: 10.1007/s11664-014-3104-7
Keywords
CdTe; solar cells; close space sublimation; nanoheteroepitaxy; selective growth
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Funding
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- National Science Foundation [ECS-0335765]
- National Institute of Nano Engineering (NINE)
- Solar Economy Integrative Graduate Education Research Traineeship (SEIGERT), NSF [DGE-0903670]
- Solar Economy Integrative Graduate Education Research Traineeship (SEIGERT), DOE [DE-EE0005958]
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Selective-area deposition of CdTe on CdS via close-space sublimation is used to study the effect of window size (2 mu m and 300 nm) on grain growth. The basic fabrication procedures for each of the layers (CdS, SiO2, and CdTe) and for achieving selective-area growth are presented. Selective-area growth of both micro- and nano-scale CdTe islands on CdS substrates using close-spaced sublimation is demonstrated. Scanning electron microscopy and electron backscatter diffraction microstructure analysis show that the micro-scale CdTe islands remain polycrystalline. However, when the island size is reduced to 300 nm, single crystal CdTe can be achieved within the windows. The CdTe grains were most often in the (101) orientation for both the micro- and nano-sized CdTe islands.
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