4.5 Article

Thermoelectric Performance of Multiple-Doped Co4Sb12-x-y-z Ge x Te y S z Skutterudite Compounds

Journal

JOURNAL OF ELECTRONIC MATERIALS
Volume 42, Issue 7, Pages 1454-1457

Publisher

SPRINGER
DOI: 10.1007/s11664-012-2288-y

Keywords

Skutterudite; doping; thermal conductivity

Funding

  1. Development Program of China [2012AA051104]
  2. National Basic Research Program of China [2007CB607506]
  3. National Natural Science Foundation of China [10832008, 51272198]
  4. Fundamental Research Funds for the Central Universities [2012-Ia-036]

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CoSb3 skutterudites multiply doped with Ge, Te, and S were synthesized by solid-state reaction and spark plasma sintering. x-Ray diffraction studies revealed that Ge, Te, and S entered the lattice of the CoSb3 compounds, and while Te increased the lattice volume, Ge and S decreased it. Compared with the undoped and single-doped CoSb3 compounds, the thermal conductivity and lattice thermal conductivity are significantly suppressed due to greatly increased point defect scattering. It is found that S is more effective for decreasing the lattice thermal conductivity than Te and Ge. The highest thermoelectric figure of merit, ZT, exceeds 1.1 for the Co4Sb11.25Ge0.05Te0.63S0.07 compound at 800 K.

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