Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator

Published 2011 View Full Article

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Title
Nonvolatile Silicon Memory Using GeO x -Cladded Ge Quantum Dots Self-Assembled on SiO2 and Lattice-Matched II–VI Tunnel Insulator
Authors
Keywords
-
Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 40, Issue 8, Pages 1769-1774
Publisher
Springer Nature
Online
2011-06-15
DOI
10.1007/s11664-011-1685-y

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