Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 41, Issue 6, Pages 1675-1679Publisher
SPRINGER
DOI: 10.1007/s11664-011-1786-7
Keywords
Thermoelectric; Mg2Si; solid-state reaction; mechanical alloying; hot pressing
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Funding
- Fundamental R&D Program for Core Technology of Materials
- Ministry of Knowledge Economy, Republic of Korea
- Regional Innovation Center (RIC)
- Ministry of Trade, Industry & Energy (MOTIE), Republic of Korea [B0009047] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The electronic transport and thermoelectric properties of Al-doped Mg2Si (Mg2Si:Al , = 0, 0.005, 0.01, 0.02, 0.03) compounds prepared by solid-state synthesis were examined. Mg2Si was synthesized by solid-state reaction (SSR) at 773 K for 6 h, and Al-doped Mg2Si powders were obtained by mechanical alloying (MA) for 24 h. Mg2Si:Al were fully consolidated by hot pressing (HP) at 1073 K for 1 h, and all samples showed -type conduction, indicating that the electrical conduction is due mainly to electrons. The electrical conductivity increased significantly with increasing Al doping content, and the absolute value of the Seebeck coefficient decreased due to the significant increase in electron concentration from 10(16) cm(-3) to 10(19) cm(-3) by Al doping. The thermal conductivity was increased slightly by Al doping, but was not changed significantly by the Al doping content due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity. Mg2Si:Al-0.02 showed a maximum thermoelectric figure of merit of 0.47 at 823 K.
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