Article
Nanoscience & Nanotechnology
B. Li, H. Huang
Summary: A furan ring is often incorporated into n-conjugated molecules, either by fusion with a carbon n-system or as an n-spacer, leading to significant changes in the photophysical, electrochemical, and charge transport properties. Furan semiconductors, as a emerging class of organic semiconductors, have attracted wide attention due to their remarkable features such as high solubility, photoluminescent quantum efficiency, and carrier mobility. Notably, both p-type and n-type furan semiconductors show great potential for applications in organic field-effect transistors (OFETs), with the highest mobility of 7.7 cm2/Vs achieved for a quinoidal oligofuran. In this review, we summarize the development of furan semiconductors and their applications in OFETs, providing a perspective on these materials.
MATERIALS TODAY NANO
(2023)
Article
Nanoscience & Nanotechnology
Shujing Guo, Zhongwu Wang, Yining Ma, Jiannan Qi, Shougang Sun, Liqian Yuan, Yongxu Hu, Yinan Huang, Shuguang Wang, Xiaosong Chen, Jie Li, Liqiang Li, Wenping Hu
Summary: We developed a novel and general strain balance strategy to stabilize the aggregate state of organic semiconductor (OSC) films and enhance the robustness of organic field-effect transistors (OFETs). By introducing a compressive strain layer, the intrinsic tensile strain induced by substrates in OSC films can be well balanced, resulting in a highly stable aggregate state. OFETs based on strain-balanced OSC heterojunction films exhibit excellent operational and storage stability. This work provides an effective and general strategy to stabilize OSC films and guidance in constructing highly stable organic heterojunction devices.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Physical
Yilin Li, Xuan Zeng, Qiannan Ye, Rihui Yao, Jinyao Zhong, Xiao Fu, Yuexin Yang, Muyun Li, Honglong Ning, Junbiao Peng
Summary: In this study, the influence mechanism of oxygen-related defect states on the performance and stability of high mobility oxide TFT was analyzed by adjusting the oxygen percentage. Through the clever design of homo-junction TFT, devices with high mobility and good stability were achieved.
SURFACES AND INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Muhammad Atif Khan, Muhammad Qasim Mehmood, Yehia Massoud
Summary: This study investigates the electrical response of WSe2 field-effect transistor at high temperatures and finds that annealing at 350 K improves device performance, while annealing beyond this temperature has adverse effects. These findings provide insights for designing durable 2D materials-based devices for high-temperature practical applications.
APPLIED SCIENCES-BASEL
(2022)
Article
Physics, Applied
Zhonghao Sun, Huolin Huang, Ronghua Wang, Yanhong Liu, Nan Sun, Feiyu Li, Pengcheng Tao, Yongshuo Ren, Shukuan Song, Hongzhou Wang, Shaoquan Li, Wanxi Cheng, Jun Gao, Huinan Liang
Summary: This study investigated the electrical characteristics of the SiON/AlGaN and SiON/GaN interfaces using fabricated metal-insulator-semiconductor devices. The over-etching in the gate trench resulted in higher trap state density at the SiON/GaN interface, leading to a more obvious degradation of subthreshold swing. Traps located at the SiON/AlGaN interface were found to be at a deeper energy level, causing a greater threshold voltage shift in the drain-bias stress measurement.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Nanoscience & Nanotechnology
Mei-Nung Chen, Chun-Yao Ke, Audithya Nyayachavadi, Haoyu Zhao, Michael U. Ocheje, Madison Mooney, Yen-Ting Li, Xiaodan Gu, Guey-Sheng Liou, Simon Rondeau-Gagne, Yu-Cheng Chiu
Summary: The optimization of field-effect mobility in polymer FETs is crucial for the development of organic electronics, but challenges remain in understanding the design and processing of semiconducting polymers. This study developed a facile solution processing approach using blends of PDPP-TVT and PTPA-3CN, resulting in a 3.5-fold increase in hole mobility with retained stability over 20 weeks. The improvements in mobility were attributed to the amorphous D-A conjugated structure and strong intramolecular polarity of PTPA-3CN. Composite analysis by XPS and DSC demonstrated uniform distribution and good mixing in the binary polymer systems. This blending methodology offers a new design strategy for organic transistor systems and holds great promise for practical applications of OFETs.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Polymer Science
Jinyang Chen, Jie Zhou, Na Li, Yubing Ding, Shiwei Ren, Minfeng Zeng
Summary: In this study, a novel acceptor structural unit called TVDPP was reported, which differs from classical materials based on TDPP structures. The monomer and polymer P2TVDPP were successfully synthesized using a designed synthetic route and the Stille-coupling polymerization reaction. The polymer exhibited expected properties and its absorption spectra and energy levels were characterized. The organic field-effect transistor (OFET) based on P2TVDPP showed excellent carrier mobility and on/off current ratio, marking an important advancement in the significance of DPP-based materials in optoelectronic devices and organic electronics.
Article
Nanoscience & Nanotechnology
Luca Anzi, Artur Tuktamyshev, Alexey Fedorov, Amaia Zurutuza, Stefano Sanguinetti, Roman Sordan
Summary: This study demonstrates a GaAs FET with a monolayer graphene gate, where the threshold voltage can be externally controlled by an additional control gate. The graphene gate forms a Schottky junction with the transistor channel, allowing for modulation of channel conductivity and threshold voltage control.
NPJ 2D MATERIALS AND APPLICATIONS
(2022)
Article
Chemistry, Physical
Yuji Mitake, Ayaka Gomita, Ryohei Yamamoto, Miyabi Watanabe, Ryo Suzuki, Nobuyuki Aoki, Makoto Tanimura, Tadahiko Hirai, Masaru Tachibana
Summary: In this study, m-xylene-solvated C70 single-crystal needles were successfully grown using the liquid-liquid interfacial precipitation method and used for OFETs. The experimental results showed that the solvated C70 single-crystal needles exhibited comparable excellent transport properties to C60 single-crystal needles.
CHEMICAL PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Hao Zong, Min Wang, Weinan Chen, Zhong-Da Zhang, Jia-Wei Cai, Cong Shen, Li-Xing Li, Shui-Long Kang, Yuan Fang, Gang Zhou, Sui-Dong Wang
Summary: A comparison of organic single crystals of different dimensions but with the same material reveals insights into their carrier injection mechanism. Two-dimensional (2D) and microrod single crystals with identical crystalline structure of a thiopyran derivative, C8-SS, were grown on a glycerol surface. Organic field-effect transistors (OFETs) based on the 2D C8-SS single crystal exhibit superior performance, especially in contact resistance (RC). RC is found to be influenced by the resistance of the crystal bulk in the contact region, with the 2D OFETs having significantly reduced RC due to their tiny thickness. The 2D OFETs demonstrate high operational stability and channel mobility up to 5.7 cm2/V center dot s, highlighting the potential of 2D molecular single crystals in organic electronics.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Vivek Singh, Jyoti Sinha, Sushobhan Avasthi
Summary: Copper oxides exhibit p-type conductivity, making them suitable for electronic applications. Pure-phase Cu2O can be obtained through a combination of chemical vapor deposition and oxidation processes. The material shows promising potential for electronic applications.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Young-Min Kim, Seongin Hong, Youngki Yoon, Sunkook Kim, Haewon Cho, Mayuri Sritharan, Younghyun Ju, Pavan Pujar, Riya Dutta, Woo-Sung Jang
Summary: Transition-metal dichalcogenides are potential alternatives to Si electronics due to their high carrier mobility and scalability. WSe2, a key component in CMOS logic circuits, has limited p-type electrical performance, which is being addressed through various approaches. In this study, a heterostructural multilayer WSe2 channel and solution-processed aluminum-doped zinc oxide (AZO) were used to improve the electrical properties of WSe2.
Article
Nanoscience & Nanotechnology
Jianguo Dong, Zhe Sheng, Rui Yu, Wennan Hu, Yue Wang, Haoran Sun, David Wei Zhang, Peng Zhou, Zengxing Zhang
Summary: The study demonstrates that using indium and ferroelectric hafnium zirconium oxide as materials can achieve WSe2 N-type negative capacitance field-effect transistors with significantly low subthreshold slope, potentially prolonging device miniaturization, achieving high gate control ability, and providing a new solution for low-power high-density electronic devices.
ADVANCED ELECTRONIC MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Gnanasampanthan Abiram, Murugathas Thanihaichelvan, Punniamoorthy Ravirajan, Dhayalan Velauthapillai
Summary: This review summarizes the current research, structures, and properties of perovskite FETs, as well as their applications in optoelectronic devices. Additionally, it highlights the challenges faced by perovskite FETs and future directions for their development.
Article
Materials Science, Multidisciplinary
Chikara Hayasaka, Shusaku Nagano, Koji Nakano
Summary: This study demonstrates the synthesis of dibenzo[d,d']naphtho[2,3-b:6,7-b']difurans (DBNDFs) and their application as the active layers for organic field effect transistors (OFETs). The DBNDF pi-core arranged well in thin films, exhibiting typical p-type transport characteristics in the OFET devices. Particularly, the OFET devices based on didecyl-substituted DBNDF showed a hole mobility as high as 0.62 cm(2).V-1.s(-1).
ORGANIC ELECTRONICS
(2022)
